Recently, the Terahertz Device Research Group of the Microwave Devices and Integrated Circuits Laboratory (Four-Room) of the Institute of Microelectronics, Chinese Academy of Sciences has developed terahertz Schottky diodes with a cut-off frequency of 3.37 THz and quartz circuits used in the terahertz band. As the core component of the terahertz frequency doubler, this device has been verified by CLP Group 41 and its performance is comparable to similar international products.
Terahertz waves refer to electromagnetic waves with a frequency in the range of 0.1THz ~ 10.0THz. It has many excellent properties, and was rated by the United States as one of the "Top Ten Technologies to Change the Future World." Terahertz spectroscopy, terahertz imaging and terahertz communication are the three major directions of current research. It has important applications in many scientific fields such as safety inspection, non-destructive detection, astrophysics, biology, medicine, atmospheric physics, environmental ecology and military science. Schottky diodes with extremely high cut-off frequency can realize the mixing, detection and frequency doubling of terahertz waves at room temperature, which is one of the core technologies of terahertz; in addition, it is too The basis of Hertz technology.
The terahertz device and circuit research group led by the director of the four-room researcher Jin Zhi conducted research on the key technologies of terahertz circuits, designed and optimized the growth of device epitaxial materials, and broke through the low-resistance ohmic contact alloy Key manufacturing processes such as hole etching and air bridge corrosion technology have effectively reduced the series resistance and parasitic capacitance of the device, realized Schottky diodes that can be applied in the terahertz frequency band, and developed a variety of Schottky diode integration In this way, the highest cut-off frequency of the terahertz Schottky diode device reaches 3.37THz, which can be widely used in the detection, frequency doubling and mixing of terahertz waves.
In order to solve the problem of high loss of peripheral circuits in the terahertz frequency band, researchers developed a thinning technology for the back of the device and the circuit substrate, and used a low dielectric constant quartz material to implement the terahertz circuit, and developed a thickness of less than 50um, which can be applied to The core circuit in the terahertz frequency band greatly reduces the loss in the terahertz frequency band and improves the efficiency of the circuit module.
The research group and the 41st Institute of CLP Group jointly carried out the verification work of the terahertz frequency doubler, using the self-developed terahertz Schottky diode device to achieve the frequency doubler work in the terahertz frequency band, 170 ~ 220GHz The frequency doubling efficiency is 3.6%, and the frequency doubling efficiency from 220 to 325 GHz reaches 1.0%, which can achieve wide frequency doubling. Its output power and frequency doubling efficiency are comparable to similar foreign VDI products. The source has broad application prospects in terahertz imaging, terahertz communication and satellite remote sensing. It is of great significance for the localization of the core devices (mainly Schottky diodes) of the terahertz system, and provides good device and process support for the development of domestic terahertz technology.
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